Measuring device and a method for measuring a chip-to-chip-carrier connection

ABSTRACT

A measuring device is provided, the measuring device including: a power supply to provide electric power to a chip via at least one of a chip connection and a chip-carrier connection; a chip arrangement receiving portion configured to receive a chip arrangement, the chip arrangement including a chip and a plurality of chip-to-chip-carrier connections; a detection portion including: a plate; a detection circuit coupled to the plate and configured to detect an electrical signal from the plate; wherein the plate is configured such that it covers at least part of the chip arrangement; and wherein at least one chip-carrier connection is in electrical connection with the plate.

TECHNICAL FIELD

Various embodiments relate generally to a measuring device and a method for measuring a chip-to-chip-carrier connection.

BACKGROUND

Defects in electrical connections, e.g. faulty connections between a leadframe and bond wires are not readily detectable by conventional X-ray, Automatic Test Equipment ATE testing, and existing vector-less testing measuring devices. X-ray detection systems for faulty electrical connections suffer from low detection capability and very slow though-put. Therefore many faulty connections remain unidentified, and furthermore, only a sample selection of electrical connections can be tested. X-ray detection systems are mainly used for simple wire bond packages and the test is based on random sampling of electrical connections. X-ray inspections are increasingly complex and expensive for high pin count packages, e.g. QFP80 and above.

Current ATE testing systems are unable to detect “near-short” wires. “Near-short” wires may refer to wires which may not be in direct physical contact with each other, however may be in very close proximity to each other. “Near-short” wires which are too close to each other may also result in electrical failure even though they are not physically in contact each other. Examples of anomalies in interconnections include near short wires, near short leads, vertically displaced wires, vertically sagging wires, sweep wires and horizontally displaced wires. The detection of such anomalies using stand-alone electrical testing is not possible with current testing methods.

SUMMARY OF THE INVENTION

Various embodiments provide a measuring device, including: a power supply configured to provide electric power to a chip via at least one of a chip connection and a chip-carrier connection; a chip arrangement receiving portion configured to receive a chip arrangement, the chip arrangement including a chip and a plurality of chip-to-chip-carrier connections; a detection portion including: a plate; a detection circuit coupled to the plate and configured to detect an electrical signal from the plate; wherein the plate is configured such that it covers at least part of the chip arrangement; and wherein at least one chip-carrier connection is in electrical connection with the plate.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, like reference characters generally refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead generally being placed upon illustrating the principles of the invention. In the following description, various embodiments of the invention are described with reference to the following drawings, in which:

FIGS. 1A, 1B, 1C and 1D show a measuring device according to an embodiment;

FIGS. 2A and 2B show a measuring device according to an embodiment;

FIG. 3 shows a measuring device according to an embodiment;

FIG. 4 shows a measuring device according to an embodiment;

FIG. 5 shows a measuring device according to an embodiment;

FIG. 6 shows a measuring device according to an embodiment;

FIGS. 7A and 7B show an equivalent circuit of representative capacitances using guarding by grounding in a measuring device according to an embodiment;

FIG. 8A shows an equivalent circuit of representative capacitances using guarding by connecting to ground in a measuring device according to an embodiment;

FIG. 8B shows an equivalent circuit of representative capacitances using guarding by connecting to the plate in a measuring device according to an embodiment;

FIGS. 9A and 9B show x-ray detected faults in measured devices;

FIG. 9C shows a measurement using a measuring device according to an embodiment;

FIG. 10 shows a method for measuring a chip-to-chip connection using a measuring device according to an embodiment;

FIG. 11 shows a computer arrangement configured to execute instructions for measuring a chip-to-chip-carrier connection.

DESCRIPTION

The following detailed description refers to the accompanying drawings that show, by way of illustration, specific details and embodiments in which the invention may be practiced.

The word “exemplary” is used herein to mean “serving as an example, instance, or illustration”. Any embodiment or design described herein as “exemplary” is not necessarily to be construed as preferred or advantageous over other embodiments or designs.

Vector-less testing, e.g. the VTEP (Vector-less Test Enhanced Performance) technology from Agilent™ Technologies, are used for printed circuit board assembly PCBA processes. Existing vector-less testing have insufficiently high detection capabilities to detect small anomalies, and are therefore capable of mainly detecting large defects, e.g. a defective solder joint in a printed circuit board, e.g. a clear open circuit in printed circuit board, e.g. a large vertical lead shift in lead frames. However, smaller anomalies, near short wires, near short leads, vertically displaced wires, vertically sagging wires, sweep wires and horizontally displaced wires are not detectable with sufficient sensitivity.

FIG. 1A shows a measuring device 100, according to an embodiment. Measuring device 100 may include a power supply 102, e.g. an AC signal source configured to provide electric power, e.g. an electrical signal, e.g. an AC source signal, to a chip (which may also be referred to as bare die) 104 via at least one of a chip connection 106 and a chip-carrier connection 108; a chip arrangement receiving portion 112 configured to receive a chip arrangement 114, the chip arrangement 114, e.g. a device under test, including a chip 104, and a chip-carrier 116 connected to the chip 104 via one or more chip-to-chip-carrier connections 118; a detection portion 122 including a plate 124 configured to cover at least part of chip arrangement 114 and a detection circuit 126 coupled to plate 124 and configured to detect an electrical signal from plate 122.

Detection portion 122 including detection circuit 126 is shown in illustration 110 of FIG. 1B.

Chip 104 may include a semiconductor chip, e.g. a silicon chip, e.g. a microcontroller device. Each chip-to-chip-carrier connection 118 may include a chip-carrier connection 108 connected to chip 104 via a chip connection 106, e.g. chip-to-chip-carrier connection 118 a may include a chip-carrier connection 108 a connected to chip 104 via a chip connection 106 a, e.g. chip-to-chip-carrier connection 118 b may include a chip-carrier connection 108 b connected to chip 104 via a chip connection 106 b. Chip connection 106 may include a bond wire. Chip connection 106 may include an electrically conductive material. Chip-carrier connection 108 may include part of a leadframe. Chip-carrier connection 108 may include a leadframe finger. Chip-carrier connection 108 may include a leadframe pin. Chip-carrier connection 108 may include an electrically conductive material. Chip-carrier connection 108 may include at least part of one or more from the following group of chip-carrier connections, the group consisting of: a lead frame, an electrically conductive trace, a metal trace in substrate, an electrically conductive wire, a wire bond, a flip-chip bump, a through-silicon via TSV, a through-mold via TMV, a chip-package interconnect. Chip-carrier connection 108 may include at least part of one or more from the following group of chip-carrier connections, the group consisting of: a lead frame, an electrically conductive trace, a metal trace in substrate, an electrically conductive wire, a wire bond, a flip-chip bump, a through-silicon via TSV, a through-mold via TMV, a chip-package interconnect. Chip arrangement 114 may include a plurality of chip-carrier connections 108, 108 a, 108 b, e.g. a plurality of leadframe fingers, forming part of a leadframe. E.g. a 144-pin leadframe housing may include 144 leadframe fingers.

Chip arrangement 114 may include chip 104 and a plurality of chip-to-chip-carrier connections 118, 118 a, 118 b, 118 c. Measuring device 100 may be configured to determine the state of each of the plurality of chip-to-chip-carrier connections 118, 118 a, 118 b, 118 c. Measuring device 100 may be configured to measure a capacitive value induced in a region surrounding a chip-to-chip-carrier connection 118. A deviation in a capacitive value of chip-to-chip-carrier connection 118, may be indicative of a poor quality between chip connection 106 and chip-carrier connection 108 which forms chip-to-chip-carrier connection 118. A deviation in a capacitive value of chip-to-chip-carrier connections 118, may be indicative of an anomaly, e.g. sweep, e.g. vertical sagging of chip connection 106. A deviation in a capacitive value of chip-to-chip-carrier connections 118, may be indicative of an anomaly, e.g. bending, of chip-carrier connection 108.

Chip-carrier 116 may include a printed circuit board. Power supply 102 may include an AC power source.

As shown in FIG. 1B, detection portion 122 of measuring device 100 may include a buffer assembly 128, e.g. a low noise buffer assembly, in electrical connection with plate 124. Detection portion 122 may include scanner 134, filter 136 and gain amplifier 138. Buffer assembly 128 may be in electrical connection with scanner 134. Scanner 134 may be in electrical connection with filter 136. Filter 136 may be in electrical connection with gain amplifier 138. Gain amplifier 138 may be in electrical connection with detection circuit 126. Detection circuit 126 may include a digital signal processing DSP based AC detector. Detection portion 122 of measuring device 100 may include a multiplexer circuit 132 for selecting an electrical signal from plate 124.

Multiplexer circuit 132 may be in electrical connection with plate 124. Detection circuit 126 may be in electrical connection with multiplexer circuit 132. Detection portion 122 of measuring device 100 may further include a processing circuit for processing one or more electrical signals detected by detection circuit 126.

As shown in illustration 120 of FIG. 1D, plate 124 may be electrically connected to an amplifier board 152, e.g. an Agilent™ VTEP AMP board. Amplifier board 152 may be formed directly on or indirectly on plate 124. Plate 124 may be electrically connected to detection circuit 126 via a signal pin 154 and a ground pin 156. Plate 124 may be electrically connected to amplifier board via signal pin 154 and ground pin 156. Amplifier board 152 may be electrically connected to detection circuit 126. Amplifier board 152 may be configured to amplify signals sensed by plate 124.

Chip arrangement 114 may include chip-packaging module 182 shown in FIG. 1C.

Chip-packaging module 182 may include at least part of chip 104 and chip-to-chip-carrier connection 118 and chip housing 184, e.g. a mold material, wherein at least part of chip 104 and chip-to-chip-carrier connection 118 may be held, e.g. molded, by mold material 184.

Chip-packaging module 182 may include at least part of chip 104, chip connection 106, chip-carrier connection 108 and chip housing 184, e.g. a mold material wherein at least part of chip 104, chip connection 106 and chip-carrier connection 108 may be held, e.g. molded, by mold material 184.

Plate 124 may include a probe plate sensor. Plate 124 may be configured to cover at least part of chip arrangement 114. Plate 124 may be configured such that it covers chip arrangement 114, e.g. plate 124 may cover chip 104, and at least one of the plurality of chip-to-chip-carrier connections 118, 118 a, 118 b. Plate 124 may be arranged above at least a part of chip arrangement 114, e.g. plate 124 may be configured such that it is situated a pre-determined distance d above chip arrangement 114, e.g. plate 124 may be separated from chip arrangement 114 by a pre-determined distance d.

Plate 124 may include a spring-loaded plate arranged as close as possible to chip arrangement 114. Plate 124 may be separated from chip arrangement 114 by a pre-determined distance d ranging from about 0.5 mm to about 20 mm, e.g. from about 0.6 mm to about 10 mm, e.g. from about 0.7 mm to about 3 mm. Plate 124 may be placed as close as possible to chip arrangement 114 which allows at least part of chip arrangement 114, e.g. the device under test DUT, to be changed, e.g. removed and replaced with a further device under test DUT.

Plate 124 may be configured to cover at least part of chip-packaging module 182.

Plate 124 may be separated from chip-packaging module 182 by a pre-determined distance, d, ranging from about 0.5 mm to about 20 mm, e.g. from about 0.6 mm to about 10 mm, e.g. from about 0.7 mm to about 3 mm. Plate 124 may be placed as close as possible to chip-packaging module 182. which allows chip-packaging module 182 e.g. the device under test DUT, to be changed, e.g. removed and replaced with a further chip-packaging module 182 device under test DUT.

Chip-packaging module 182 may be described according to the following dimensions.

Chip-packaging module 182 may have a height h which represents the distance from a top side of chip packaging module 182 to a bottom side of chip-packaging module 182.

Chip-packaging module 182 may have a width W_(L-L) and a length L, wherein width W_(L-L) and length L are perpendicular to height h.

The distance between a distal tip of leadframe finger, e.g. 108 a formed on a first side of chip housing 184 of chip packaging module 182 to a distal tip of lead frame finger e.g. 108 formed on a second side of chip housing 184, wherein the second side is formed on the opposite side of chip housing 184 to the first side, may be represented by a lead-to-lead width, W_(L-L). W_(L-L) may be perpendicular to the height h.

The distance between the first side of chip housing 184 of chip packaging module 182 and the second side of chip housing 184 of chip packaging module 182, wherein the second side is formed on the opposite side of chip housing 184 to the first side, may be represented by an integrated circuit body width, W_(B). W_(B) may be perpendicular to height h.

Chip-housing 184 of chip-packaging module 182 may have a cross sectional area of W_(B)×L, which may include a cross sectional area of a top side of chip-housing 184. Cross sectional area W_(B)×L, may include a cross sectional area of a bottom side of chip-housing 184.

Chip-packaging module 182 may have an extended cross sectional area of W_(L-L)×L, which may include an extended cross sectional area of a top side of chip packaging module 182. Extended cross sectional area of W_(L-L)×L may include an extended cross sectional area of a bottom side of chip packaging module 182.

Chip 104 may have a width W_(C) and a length L_(C) (not shown), wherein W_(C) and L_(C) may be perpendicular to a thickness of chip 104.

Chip 104 may have a chip cross sectional area of W_(C)×L_(C), which may include a cross-sectional area of top side of chip 104. Cross sectional area of W_(C)×L_(C) may include a cross-sectional area of bottom side of chip 104.

Plate 124 may have a thickness t which represents the distance from a top side of plate 124 to a bottom side of plate 124.

Plate 124 may have a width W_(P) and a length L_(P), wherein W_(P) and L_(P) may be perpendicular to the thickness t.

Plate 124 may have a plate cross sectional area of W_(P)×L_(P), which may include a cross-sectional area of top side of plate 124. Cross sectional area of W_(P)×L_(p) may include a cross-sectional area of bottom side of plate 124.

The plate cross sectional area may be equal to or smaller than extended cross sectional area of chip-packaging module 182.

The plate cross sectional area may be equal to or smaller than extended cross sectional area of chip-packaging module 182, and larger than the chip cross sectional area.

The plate cross sectional area may be equal to or smaller than cross sectional area of chip-packaging module 182.

The plate cross sectional area may be equal to or smaller than cross sectional area of chip-packaging module 182, and larger than the chip cross sectional area.

Width W_(P) of plate 124 may be equal to or smaller than the width W_(L-L) of chip-packaging module 182.

Width W_(P) of plate 124 may be equal to or smaller than the width W_(L-L) of chip-packaging module 182, and larger than the width W_(C) of chip 104.

Width W_(P) of plate 124 may be equal to or smaller than width W_(B) of chip-packaging module 182.

By way of example, with a 10 mm×10 mm chip-packaging module 182, i.e. W_(B)=10 mm, L=10 mm, plate 124 may be a 10 mm×10 mm plate, i.e. W_(P)=10 mm, L_(P)=10 mm.

By way of example, with a 10 mm×10 mm chip-packaging module 182, i.e. W_(B)=10 mm, L=10 mm, plate 124 may be a 9 mm×9 mm plate, i.e. W_(P)=9 mm, L_(P)=9 mm.

Width W_(P) of plate 124 may be equal to or smaller than width W_(B) of chip-packaging module 182, and larger than the width W_(C) of chip 104.

Length L_(P) of plate 124 may be equal to or smaller than length L of chip-packaging module 182.

Length L_(P) of plate 124 may be equal to or smaller than length L of chip-packaging module 182, and larger than the width W_(C) of chip 104.

At least one of length L_(P) of plate 124 and width W_(P) of plate 124 may be equal to or smaller than at least one of width W_(L-L) and width W_(B), and length L of chip-packaging module 182.

The dimensions of plate 124 may be selected according to the size of the chip arrangement 114. The dimensions of plate 124 may be selected according to the size of chip-packaging module 182. The dimensions of plate 124 may be selected according to the size of chip 104. The dimensions of plate 124 may be selected according to the size of chip 104 and chip to chip-carrier-connections 118.

Width W_(P) of plate 124 may range from about 0.5 mm to about 40 mm, e.g. from about 10 mm to about 3 mm, e.g. about 15 mm to about 25 mm.

Length L_(P) of plate 124 may range from about 0.5 mm to about 40 mm, e.g. from about 10 mm to about 3 mm, e.g. about 15 mm to about 25 mm.

Plate 124 may include a rectangular plate. Plate 124 may include an electrically conductive material. Plate 124 may include a multilayer electrically conductive material. Plate 124 may include one or more from the following group of materials, the group consisting of: Au, Cu, Ag, Al, Ti, Fe, Ni, brass and steel, e.g. V2A steel, NiP, CuAu, CuAg, CuNi.

Power supply 102 may be configured to provide electric power, e.g. AC power, e.g. an AC source signal, to a chip 104 via at least one of a first chip connection 106 and a first chip-carrier connection 108, e.g. AC power may be supplied to a leadframe finger, via a lead frame pin to chip 104. The AC signal provided may range between about −0.55V to about +0.55V, e.g. between about −0.4V to about +0.4V, e.g. between about −0.25V to about +0.25V. The AC signal should not extend lower than −0.55V and higher than +0.55 V to avoid current flow over device input diodes.

Plate 124 may be configured to sense capacitive signals from the at least part of chip arrangement 114 covered by plate 142. The capacitive signals may include contributions from at least one of a group of signals consisting of the following: capacitive impedance between chip arrangement 114 and plate 124, capacitive impedance, _(CD), between chip 104 and plate 124, capacitive impedance, _(CW), between chip connection 106 and plate 124, capacitive impedance, _(CL), between chip-carrier connection 108 and plate 124.

Therefore, detection circuit 126 of detection portion 122 may be configured to detect at least one of a group of signals consisting of the following: capacitive impedance between chip arrangement 114 and plate 124, capacitive impedance, C_(D), between chip 104 and plate 124, capacitive impedance, C_(W), between chip connection 106 and plate 124, capacitive impedance, C_(L), between chip-carrier connection 108 and plate 124.

Power supply 102 may be configured to provide electric power to chip 104 via at least one of a first chip connection 106 and a first chip-carrier connection 108 and wherein at least one further chip-carrier connection 108 a of chip-carrier 116 may be guarded, e.g. connected to ground voltage.

The at least one further chip-carrier connection 108 a may be adjacent to first chip-carrier connection 108. The at least one further chip-carrier connection 108 a may include a plurality of further chip-carrier connections 108 a, 108 b, 108 c. The at least one further chip-carrier connection 108 a may include all further chip-carrier connections in chip arrangement 114.

According to various embodiments described below, a measuring device, may include a power supply 102 configured to provide electric power, e.g. AC power, e.g. an AC source signal, to a chip 104 via at least one of a chip connection 106 and a chip-carrier connection 108; a chip arrangement receiving portion 112 configured to receive a chip arrangement 114, chip arrangement 114 including a chip 104 and a chip-carrier 116 connected to chip 104 via one or more chip-to-chip-carrier connections 118; a detection portion 122 including: a plate 124; a detection circuit 126 coupled to plate 124 and configured to detect an electrical signal from plate 124; wherein plate 124 is configured such that it covers at least part of at least one of chip 104, chip-carrier 116, and chip-to-chip-carrier connection 118; and wherein plate 124 is further configured such that at least part of the at least one of chip 104, chip-carrier 116, and chip-to-chip-carrier connection 118 is uncovered by plate 124.

At least part of at least one of chip 104, chip-carrier 116, and chip-to-chip-carrier connection 118 being covered by plate 124, may mean that at least part of at least one of chip 104, chip-carrier 116, and chip-to-chip-carrier connection 118 may be electrically engaged with plate 124. E.g. plate 124 may be configured to sense or receive electrical signals, e.g. capacitive signals, transmitted by at least part of at least one of chip 104, chip-carrier 116, and chip-to-chip-carrier connection 118.

At least part of the at least one of chip 104, chip-carrier 116, and chip-to-chip-carrier connection 118 being uncovered by plate 124 may mean that at least part of the at least one of chip 104, chip-carrier 116, and chip-to-chip-carrier connection 118 may be electrically disengaged with plate 124. E.g. plate 124 may be configured such that the sensing of electrical signals, e.g. capacitive signals, transmitted by at least part of the at least one of chip 104, chip-carrier 116, and chip-to-chip-carrier connection 118 is minimised or prevented.

FIG. 2A shows a measuring device 200 according to an embodiment. The basic functionalities of all the features described with respect to measuring device 100 are applicable to measuring device 200. Plate 124 of measuring device 100 is modified to plate 224. The functionalities of the features described above with respect to plate 124 are applicable to plate 224.

Plate 224 is configured such that it covers at least part of at least one of chip 104, chip-carrier 116, and chip-to-chip-carrier connection 118; and wherein plate 224 is further configured such that at least part of at least one of chip 104, chip-carrier 116, and chip-to-chip-carrier connection 118 is uncovered by plate 224.

Plate 224 may be configured such that it covers at least part of one or more chip-to-chip-carrier connections 118 and such that at least part of chip 104 and chip-carrier 116 is uncovered by plate 224.

Plate 224 may be configured such that it covers at least part of one or more chip connections 106 and that at least part of chip 104, at least part of chip-carrier 116 and at least part of one or more chip-carrier connections 108 are uncovered by plate 224.

A portion of chip arrangement 114 may be uncovered by plate 224, e.g. chip 104 may be uncovered by plate 224. Plate 224 may be configured to cover at least part of the one or more chip-to-chip-carrier connections 118.

Plate 224 may include a ring plate, as shown in illustration 210 of FIG. 2B, e.g. wherein a portion of plate 124, e.g. a two-dimensional rectangular plate, may be removed to form ring plate 224. FIG. 2B illustrates a view from a top side of plate 224. Plate 224 may include a ring plate wherein a center portion of plate 124 may be removed to form ring plate 224. As chip arrangement 114 may include a plurality of chip-to-chip connections 118, 118 a, 118 b, wherein each chip-to-chip connection, e.g. 118 including a chip-carrier connection, e.g. 108 connected to chip 104 via a chip connection, e.g. 106, may converge at chip 104, a ring plate 224 easily leaves chip 104 uncovered while covering the plurality of chip-to chip connections 118, 118 a, 118 b, converging at chip 104. The size of plate 224 may be adapted such that plate 224 may be configured to cover one or more chip connections 106, 106 a, 106 b of the plurality of chip-to chip connections 118, 118 a, 118 b, and leaving a one or more chip-carrier connections 108, 108 a, 108 b and chip 104 uncovered. The size of plate 224 may be adapted such that plate 224 may be configured to cover one or more chip-carrier connections 108, 108 a, 108 a of the plurality of chip-to chip connections 118, and leaving one or more chip connections 106, 106 a, 106 b and chip 104 uncovered. Furthermore, plate 224 may be configured as shown in illustration 220 to cover areas where possible bending and anomalies occur, e.g. bonding areas 242 of the device components, where anomalies, e.g. bending, and “near-short” phenomena can occur. Plate 224 may be configured to cover as little of chip 104 as possible.

With plate 124 of measuring device 100 described with respect to FIGS. 1A, 1B and 1C, the capacitive signal detected by detection circuit 126 of detection portion 122 may detect a capacitive contribution from chip arrangement 114, including the capacitive impedance, C_(D), between chip 104 and plate 124, the capacitive impedance, C_(W), between chip connection 106 and plate 124 and the capacitive impedance, C_(L), between chip-carrier connection 108 and plate 124.

With modified plate 224, plate 224 may be matched to a target area of chip arrangement 114, e.g. specifically to chip connection 106, thereby improving the detection of the target area of chip arrangement 114, e.g. chip connection 106. The target area of chip arrangement 114 may include a plurality of chip connections 106. This promotes a mechanism of competitive detection of wire deformation, thereby minimizing noise from a non-targeted detection area of chip arrangement 114. E.g. Capacitive signals from the non-targeted detection areas chip 104 and chip-carrier connection 108 may be minimized. E.g., capacitive impedance, C_(L), between chip-carrier connection 108 and plate 124 and capacitive impedance, C_(D), between chip 104 and plate 124 may be minimized.

Ring probe plate 224 may include a lateral two-dimensional plate, with a portion removed. Ring probe plate 224 may include a lateral two-dimensional plate, with a center portion removed. Ring probe plate 224 may include a lateral two-dimensional plate with a hole.

Ring probe plate 224 may have outer ring dimensions defined as the dimensions of probe plate 124 as described above. Ring probe plate 224 may have an outer ring dimension having a width W_(P) and a length L_(P), wherein W_(P) and L_(P) may be perpendicular to the thickness t or probe plate 224. The features described with respect to the dimensions of W_(p) and a length L_(P), described with respect to probe plate 124 apply to ring probe plate 224.

Ring probe plate 224 may have inner ring dimensions, the inner ring defining the area of the removed portion, e.g, the hole, wherein the inner ring may have a width W_(R) and a length L_(R). In other words, the removed portion could have a width W_(R) and a length L_(R). In other words, the cross sectional area of the removed portion, e.g. the hole, may be W_(R)×L_(R).

The cross sectional area of the removed portion, e.g. the hole in plate 224 may be equal to or smaller than the cross sectional area of the chip. The cross sectional area of the removed portion, e.g. the hole in plate 224 may be larger than the cross sectional area of the chip.

Length L_(R) of the removed portion, e.g. the hole in plate 224, may be equal to or smaller than length L_(C) of chip 104.

Width W_(R) of the removed portion, e.g. the hole in plate 224, may be equal to or smaller than length W_(C) of chip 104.

At least one of a length L_(P) of the removed portion, e.g. the hole in plate 224, and width W_(R) of the removed portion, e.g. the hole in plate 224, may be equal to or smaller than at least one of a width W_(C), and length L_(C) of chip 104.

Width W_(P) of plate 224 may range from about 0.5 mm to about 40 mm, e.g. from about 10 mm to about 3 mm, e.g. about 15 mm to about 25 mm.

Length L_(P) of plate 224 may range from about 0.5 mm to about 40 mm, e.g. from about 10 mm to about 3 mm, e.g. about 15 mm to about 25 mm.

Width W_(R) of plate 224 may range from about 0.5 mm to about 40 mm, e.g. from about 10 mm to about 3 mm, e.g. about 15 mm to about 25 mm.

Length L_(R) of plate 224 may range from about 0.5 mm to about 40 mm, e.g. from about 10 mm to about 3 mm, e.g. about 15 mm to about 25 mm.

By way of example, with a 10 mm×10 mm chip-packaging module 182, i.e. W_(B)=10 mm, L=10 mm, holding a 3 mm×3 mm chip 104, i.e. W_(C)=3 mm, L_(C)=3 mm, plate 224 may be a 10 mm×10 mm plate, i.e. W_(P)=10 mm, L_(P)=10 mm, and inner ring size may be 3 mm×3 mm, i.e. W_(R)=3 mm, L_(R)=3 mm.

By way of example, with a 10 mm×10 mm chip-packaging module 182, i.e. W_(B)=10 mm, L=10 mm, holding a 3 mm×3 mm chip 104, i.e. W_(C)=3 mm, L_(C)=3 mm, plate 224 may be a 9 mm×9 mm plate, i.e. W_(P)=9 mm, L_(P)=9 mm, and inner ring size may be 2.5 mm×2.5 mm, i.e. W_(R)=2.4 mm, L_(R)=2.4 mm.

FIG. 3 shows a measuring device 300 according to an embodiment. The basic functionalities of all the features described with respect to measuring device 100 and 200 are applicable to measuring device 300. According to an embodiment, measuring device 300 may include measuring device 100 described with respect to FIG. 1, further including a top shield plate 346 formed between chip arrangement 114 and plate 124.

Top shield plate 346 may be configured such that it is formed on the same side of chip arrangement 114 as plate 124.

Top shield plate 346 may be configured such that it is formed above at least part of chip 104, chip-carrier 116, and chip-to-chip-carrier connection 118.

Top shield plate 346 may be configured such that it shields, e.g. blocks, at least part of chip 104, chip-carrier 116, and chip-to-chip-carrier connection 118 from plate 124, and that at least part of chip 104, chip-carrier 116 and chip-carrier connection 118 is not shielded, e.g. not blocked, from plate 124 by top shield plate 346. E.g. Top shield plate 346 may be configured such that it minimizes or prevents electric signals transmitted by at least part of chip 104, chip-carrier 116, and chip-to-chip-carrier connection 118 from reaching plate 124, e.g. from electrically engaging plate 124, and that it allows electric signals transmitted by at least part of chip 104, chip-carrier 116, and chip-to-chip-carrier connection 118 to reach plate 124.

Top shield plate 346 may be configured such that it shields, e.g. blocks, at least part of chip 104 and chip-carrier connection 108 from plate 124 and such that chip connection 106 is not shielded from plate 124 by top shield plate 346. E.g. Top shield plate 346 may be configured such that it minimizes or prevents electric signals transmitted by at least part of chip 104 and chip-carrier connection 108 from reaching plate 124, and that it allows electric signals transmitted by chip connection 106 to reach plate 124.

Top shield plate 346 may be configured such that a non-targeted detection area of chip arrangement 114, e.g. at least part of chip 104 and one or more chip-carrier connections 108, 108 a, 108 b is shielded by top shield plate 346, and a targeted detection area of chip arrangement 114 e.g. one or more chip connections 106, 106 a, 106 b is not shielded by top shield plate 346.

Top shield plate 346 may be configured such that it is situated a pre-determined distance above chip arrangement 114, e.g. top shield plate 346 may be separated from chip arrangement 114 by a pre-determined distance and top shield plate 346 may be formed between chip arrangement 114 and plate 124. Top shield plate 346 may include an electrically conductive material. Top shield plate 346 may include a multilayer electrically conductive material. Top shield plate 346 may include one or more from the following group of materials, the group consisting of: Au, Cu, Ag, Al, Ti, Fe, Ni, brass and steel, e.g. V2A steel, NiP, CuAu, CuAg, CuNi.

Top shield plate 346 may be attached, e.g. fixed, to part of plate 124 via an adhesive, e.g. a glue.

Top shield plate 346 may be placed as close as possible to chip arrangement 114. Top shield plate 346 may be separated from chip arrangement 114 by a pre-determined distance d ranging from about 0.5 mm to about 20 mm, e.g. from about 0.6 mm to about 10 mm, e.g. from about 0.7 mm to about 3 mm.

Top shield plate 346 may be guarded, e.g. electrically connected to a ground voltage. Top shield plate 346 may be guarded, e.g. electrically connected to a voltage other than a ground voltage. The guard voltage provided to top shield plate 346 may range between about −0.55V to about +0.55V, e.g. between about −0.4V to about +0.4V, e.g. between about −0.25V to about +0.25V. The AC signal should not extend lower than −0.55V and higher than +0.55 V to avoid current flow over device input diodes.

Top shield plate 346 may enable top partial shielding, which promotes a mechanism of competitive detection of wire deformation, thereby minimizing noise from a non-targeted detection area of chip arrangement 114, e.g. chip 104, e.g. from one or more chip-carrier connections 108, 108 a, 108 b. E.g., capacitive impedance, C_(L), between chip-carrier connection 108 and plate 124 and capacitive impedance, C_(D), between chip 104 and plate 124 may be minimized. A larger plate area 124 in measuring device 300 compared to the plate area of plate 224 covering the target area of chip arrangement 114, e.g. chip connection 106, may result in a larger target area signal, i.e. a larger measurable signal of C_(W).

According to another embodiment, plate 124 of measuring device 300 may include plate 224 described with respect to measuring device 200 of FIG. 2. Plate 224 of measuring device 300 may include all the features described above with respect to plate 224.

FIG. 4 shows a measuring device 400 according to an embodiment. The basic functionalities of all the features described with respect to measuring device 100 and 200 are applicable to measuring device 400, with measuring device 400 further including a bottom shield plate 448 formed on the opposite side of chip arrangement 114 from probe plate 124. Bottom shield plate 448 may be configured such that it is formed on the opposite side of a targeted measurement area of chip arrangement 114, e.g. chip connection 106, from probe plate 124. Bottom shield plate 448 may be configured such that it is formed below chip arrangement 114. Bottom shield plate 448 may be configured such that it is situated a pre-determined distance below chip arrangement 114, e.g. bottom shield plate 448 may be separated from chip arrangement 114 by a pre-determined distance and is formed on the opposite side of chip arrangement 114 from probe plate 124.

Bottom shield plate 448 may include an electrically conductive material. Bottom shield plate 448 may include a multilayer electrically conductive material. Bottom shield plate 448 may include one or more from the following group of materials, the group consisting of: Au, Cu, Ag, Al, Ti, Fe, Ni, brass and steel, e.g. V2A steel, NiP, CuAu, CuAg, CuNi. Bottom shield plate 448 may be guarded, e.g. electrically connected to a voltage other than a ground voltage. The guard voltage provided to bottom shield plate 448 may range between about −0.55V to about +0.55V, e.g. between about −0.4V to about +0.4V, e.g. between about −0.25V to about +0.25V. The AC signal should not extend lower than −0.55V and higher than +0.55 V to avoid current flow over device input diodes.

Bottom shield plate 448 may enable bottom shielding, which promotes a mechanism of competitive detection of wire deformation, thereby maximizing signals detected from the targeted detection area of chip arrangement 114. Therefore, the targeted signal, e.g. a targeted signal from chip connection 106 may include capacitive impedance, C_(W), between chip connection 106 and plate 124, and a further capacitive impedance, C_(A), between bottom shield plate 448 and chip connection 106. The sum of capacitive impedance, C_(W) and capacitive impedance, C_(A) may be represented by a summation capacitive impedance C_(B).

According to another embodiment, plate 124 of measuring device 400 may include plate 224 described with respect to measuring device 200 of FIG. 2. Plate 224 of measuring device 400 may include all the features described above with respect to plate 224.

FIG. 5 shows a measuring device 500 according to an embodiment. The basic functionalities of all the features described with respect to measuring device 100, 200, 300 and 400 are applicable to measuring device 500, with measuring device 500 further including top shield plate 346 described above with respect to measuring device 300, and bottom shield plate 448 described above with respect to measuring device 400.

Top shield plate 346 may be configured such that it is formed between chip arrangement 114 and plate 124 and that a non-targeted detection area of chip arrangement 114, e.g. at least part of chip 104 and one or more chip-carrier connections 108, 108 a, 108 b, is shielded by top shield plate 346, and a targeted detection area of chip arrangement 114 e.g. a chip connection 106 is not shielded by top shield plate 346. Bottom shield plate 448 may be configured such that it is formed on the opposite side of a targeted measurement area of chip arrangement 114, e.g. chip connection 106, from probe plate 124.

Top shield plate 346 may enable top partial shielding, which promotes the mechanism of competitive detection of wire deformation, thereby minimizing noise from a non-targeted detection area of chip arrangement 114, e.g. minimizing noise from chip 104, e.g. minimizing noise from one or more chip-carrier connections 108, 108 a, 108 b. E.g., capacitive impedance, C_(L), between one or more chip-carrier connections 108, 108 a, 108 b and plate 124 and capacitive impedance, C_(D), between chip 104 and plate 124 may be minimized. A larger plate area 124 in measuring device 300 compared to the plate area of plate 224 covering the target area of chip arrangement 114, e.g. chip connection 106, may result in a larger target area signal, i.e. a larger measurable signal of C_(W).

Bottom shield plate 448 may enable bottom shielding, which promotes the mechanism of competitive detection of wire deformation, thereby maximizing signals detected from the targeted detection area of chip arrangement 114. Therefore, the targeted signal, e.g. a targeted signal from chip connection 106 may include capacitive impedance, C_(W), between chip connection 106 and plate 124, and a further capacitive impedance, C_(A), between bottom shield plate 448 and chip connection 106. The sum of capacitive impedance, C_(W) and capacitive impedance, C_(A) may be represented by a summation capacitive impedance C_(B).

According to another embodiment, plate 124 of measuring device 500 may include plate 224 described with respect to measuring device 200 of FIG. 2. Plate 224 of measuring device 500 may include all the features described above with respect to plate 224.

FIG. 6 shows a measuring device 600 according to an embodiment. The basic functionalities of all the features described with respect to measuring device 100 are applicable to measuring device 600. Measuring device 600 may include power supply 102 configured to provide electric power, e.g. AC power, e.g. an AC electrical source signal, to chip 104 via at least one of a chip connection 106 and a chip-carrier connection 108; a chip arrangement receiving portion 112 configured to receive a chip arrangement 114, the chip arrangement 114 including a chip 104 and a plurality of chip-to-chip-carrier connections 118 a,118 b, 118 c; a detection portion 122 including a plate 124; a detection circuit 126 coupled to plate 124 and configured to detect an electrical signal from the plate 124; wherein plate 124 is configured such that it covers at least part of chip arrangement 114; and wherein at least one chip-carrier connection 108 is in electrical connection with plate 124.

Plate 124 may be configured such that it covers at least part of the plurality of the chip-to-chip-carrier connections 118, 118 a, 118 b, 118 c, wherein each chip-to-chip-carrier connection 118 may include a chip-carrier connection 108 connected to the chip 104 via a chip connection 106, e.g. each chip-to-chip-carrier connection 118 a may include a chip-carrier connection 108 a connected to the chip 104 via a chip connection 106 a.

Power supply 102 may be configured to provide electric power, e.g. AC power, e.g. an AC electrical source signal, to chip 104 via at least one of first chip connection 106 and first chip-carrier connection 108 and wherein at least one further chip-carrier connection may be connected to plate 124. Further chip-carrier connection may be adjacent first chip-carrier connection 108.

At least one chip-carrier connection 108 may be short-circuited to plate 124. At least one chip-carrier connection 108 may be in electrical connection with plate 124 via an electrically conductive material 678.

Guarding of at least one chip-carrier connection, e.g. guarding of a chip-carrier connection 108 a adjacent to a chip-carrier connection under test 108, e.g. a testing pin 108, enables a technique termed “mirror guarding” to be incorporated into the vector-less test The technique is named “mirror guarding” as it mirrors the equivalent circuit of the guarding circuit used in vector-less ICT testing. This will be explained further with respect to FIG. 8A and FIG. 8B.

The detection of coupling capacitance between two adjacent chip connections 106 may thereby be enabled. “Mirror-guarding” enables the detection of the small interconnect defects, such as sweep wires, e.g. horizontal displace, and small wire deformation, which is not detectable using the conventional ATE test or existing vector-less tests.

Guarding by connecting to ground as described to FIG. 1A may be enabled by connecting one or more chip-carrier connections 108 in the vicinity of carrier connection 106, the carrier connection under test to a ground voltage. Further chip-carrier connections 108 a, 108 b, 108 c in chip arrangement 114 may be connected to ground as described according to FIG. 1A. Guarding by connecting to ground minimizes noise from other chip-carrier connections 108 a, 108 b, 108 c. This method know as ICT guarding. This method provides no sensitivity to detect the coupling capacitance Z1-2 change due to wire sweep. An equivalent circuit of the capacitances in capacitive testing with respect to measuring device 100 is shown in illustration 700 of FIG. 7A.

Z₁, Z₂ and Z₃ may each represent the respective input impedances of chip-carrier connection 108, 108 a and 108 b respectively.

Z_(C1), Z_(C2) and Z_(C3) may each represent the capacitive impedance contributions of chip-carrier connection 108, chip connection 106 and chip 104, with respect to plate 124, e.g. capacitive impedance, C_(L), between chip-carrier connection 108 and plate 124, capacitive impedance, C_(W), between chip connection 106 and plate 124, capacitive impedance, C_(D), between chip 104 and plate 124 respectively.

Z₁₋₂, Z₂₋₃ each represent the coupling capacitance between chip-to-chip-carrier connections, e.g. the coupling capacitance between chip-carrier connections 108 and 108 a, e.g. the capacitive coupling between chip connections 106 and 106 a.

Z_(C1), Z_(C2) and Z_(C3) may be significantly influenced by at least one of vertical sagging of a chip-carrier connection 108 and vertical sagging of a chip connection 106.

Z₁₋₂, Z₂₋₃ may be significantly influenced by at least one of horizontal sweep of chip-carrier connection 108 and horizontal sweep of chip connection 106, e.g. wire sweep.

Z₁, Z₂, Z₃ may be significantly influenced by power bar near short.

Z_(C1) may be measured directly by using measuring device 100. Power supply 102, e.g. an AC signal source, may be configured to provide electric power, e.g. an electrical AC source signal to chip 104 via first chip-carrier connection 108, e.g. pin 1, e.g. chip-carrier connection 108. Z₁ may be measured by a first chip-carrier connection 108 to ground measurement e.g. pin 1 to ground measurement.

Coupling capacitances Z₁₋₂ and Z₂₋₃ may be measured using multiple measurements with guarding to ground as shown in illustration 710 of FIG. 7, wherein chip-carrier connections 108, 108 a and 108 b may be connected to a ground voltage.

In a first measurement, Pin 2, e.g. chip-carrier connection 108 a, and pin 3, e.g. chip-carrier connection 108 b, may be connected to a ground voltage. Capacitive impedance between pin 1, e.g. chip-carrier connection 108, and ground, Z_(M1), may be measured. The capacitive contribution to Z_(M1) may be attributed to being from parallel capacitive contributions Z₁ in parallel with Z₁₋₂.

Z _(M1) =Z ₁ //Z ₁₋₂.  Equation 1

In a second measurement, Pin 1, e.g. chip-carrier connection 108, and pin 3, e.g. chip-carrier connection 108 b, may be connected to a ground voltage. Capacitive impedance between pin 2, e.g. chip-carrier connection 108 a, and ground, Z_(M2), may be measured, the capacitive contribution to Z_(M2) being from parallel capacitive contributions Z₂ in parallel with Z₁₋₂ and Z₃.

Z _(M2) =Z ₂ //Z ₁₋₂ //Z ₃.  Equation 2

In a third measurement, Pin 1, e.g. chip-carrier connection 108, and pin 2, e.g. chip-carrier connection 108 a, may be connected to a ground voltage. Capacitive impedance between pin 3, e.g. chip-carrier connection 108 b, and ground, Z_(M3), may be measured. The capacitive contribution to Z_(M3) may be attributed to being from parallel capacitive contributions Z₃ in parallel with Z₂₋₃.

Z _(M3) =Z ₃ //Z ₂₋₃.  Equation 3

In a fourth measurement, Pin 1, e.g. chip-carrier connection 108, may be connected to a ground voltage. Pin 2, e.g. chip-carrier connection 108 a, may be floated, e.g. pin 2 may be open circuited. Capacitive impedance between pin 3, e.g. chip-carrier connection 108 b, and ground, Z_(M4), may be measured. The capacitive contribution to Z_(M4) may be attributed to being from parallel capacitive contributions Z₃ in parallel with the sum of Z₁₋₂ in parallel with Z₂, and Z₂₋₃.

Z _(M4) =Z ₃//[(Z ₁₋₂ //Z ₂)+Z ₂₋₃].  Equation 4

In a fifth measurement, Pin 3, e.g. chip-carrier connection 108 b, may be connected to a ground voltage. Pin 2, e.g. chip-carrier connection 108 a, may be floated, e.g. pin 2 may be open circuited. Capacitive impedance between pin 1, e.g. chip-carrier connection 108, and ground, Z_(M5), may be measured. The capacitive contribution to Z_(M5) may be attributed to being from parallel capacitive contributions Z₁ in parallel with the sum of Z₂₋₃ in parallel with Z₂, and Z₁₋₂.

Z _(M5) =Z ₁//[(Z ₂₋₃ //Z ₂)+Z ₁₋₂].  Equation 5

Coupling capacitances Z₁₋₂ and Z₂₋₃ may be calculated based on the above equations 1 to 5 after 5 measurements are done. However, Z₁ is much greater than Z₁₋₂, therefore leading to less signal accuracy.

Being able to enhance the coupling capacitance Z₁₋₂, results in being able to detect a measurable coupling capacitive Z₁₋₂ signal which may reflect chip-to-chip connection 118 anomalies.

The equivalent circuit of the guarding circuit used in vector-less ICT testing is shown in FIG. 8A, wherein at least one of chip-carrier connection 108 a, e.g. pin 2, and chip-carrier connection 108 b, e.g. pin 3, may be shorted to ground while chip-carrier connection 108, e.g. pin 1, is under test.

The guarding by connecting to ground of chip-carrier connections 108 a and 108 b as described with respect to each of measuring devices 100, 200, 300, 400 and 500 may be switched to be contacted to plate 124, e.g. to capacitive sensor plate 124 input, as in measuring device 600, so that each of measuring devices 100, 200, 300, 400 and 500 may be mirror guarded by connecting to plate 124. The equivalent circuit of the guarding circuit by electrical contacting to plate 124, may be represented by an equivalent circuit shown in FIG. 8B, which is the “mirror” of the equivalent circuit shown and described with respect to FIG. 8A.

An equivalent circuit of capacitances introduced by guarding by connecting to plate 124 as shown in measuring device 600 is shown in illustration 810 of FIG. 8B.

In the equivalent circuit of the guarding circuit shown in FIG. 8B, at least one of chip-carrier connection 108 a, e.g. pin 2, and chip-carrier connection 108 b, e.g. pin 3, may be shorted to plate 124 while chip-carrier connection 108, e.g. pin 1, is under test.

Z₁, Z₂ and Z₃ may each represent the respective input impedances of chip-carrier connection 108, 108 a and 108 b respectively.

Z_(C1), Z_(C2) and Z_(C3) may each represent the capacitive impedance contributions of chip-carrier connection 108, chip connection 106 and chip 104, with respect to plate 124, e.g. capacitive impedance, C_(L), between chip-carrier connection 108 and plate 124, capacitive impedance, C_(W), between chip connection 106 and plate 124, capacitive impedance, C_(D), between chip 104 and plate 124 respectively.

Z₁₋₂, Z₂₋₃ each represent the coupling capacitance between chip-to-chip-carrier connections, e.g. the coupling capacitance between chip-carrier connections 108 and 108 a, e.g. the capacitive coupling between chip connections 106 and 106 a.

Z_(C1), Z_(C2) and Z_(C3) may be significantly influenced by at least one of vertical sagging of a chip-carrier connection 108 and vertical sagging of a chip connection 106.

Z₁₋₂, Z₂₋₃ may be significantly influenced by at least one of horizontal sweep of chip-carrier connection 108 and horizontal sweep of chip connection 106, e.g. wire sweep.

Z₁, Z₂, Z₃ may be significantly influenced by power bar near short.

Z_(C1) may be measured directly by using measuring device 100, e.g. power supply 102 may be configured to provide electric power, e.g. AC power, e.g. an AC electrical source signal, to chip 104 via first chip-carrier connection 108, e.g. pin 1. Z₁ may be measured by a first chip-carrier connection 108 to ground measurement e.g. pin 1 to ground measurement.

Z_(C1) may be measured directly by using measuring device 100, e.g. power supply 102 may be configured to provide electric power, e.g. AC power, e.g. an AC electrical source signal, to chip 104 via first chip-carrier connection 108, e.g. pin 1. At least one further chip-carrier connection 108 a may be connected to plate 124.

In a first measurement, pin 2, e.g. chip-carrier connection 108 a, and pin 3, e.g. chip-carrier connection 108 b, may be connected to plate 124, e.g. may be shorted to plate 124 at a point C. Capacitive impedance between pin 1, e.g. chip-carrier connection 108, and plate 124 at a point C, Z′_(M1) may be measured. The capacitive contribution to Z′_(M1) may be attributed to being from parallel capacitive contributions Z_(C1) in parallel with Z₁₋₂.

Z′ _(M1) =Z _(C1) //Z ₁₋₂.  Equation 6

In a second measurement, Pin 1, e.g. chip-carrier connection 108, and pin 3, e.g. chip-carrier connection 108 b, may be connected to plate 124, e.g. may be shorted to plate 124 at a point C. Capacitive impedance between pin 2, e.g. chip-carrier connection 108 a, and plate 124 at a point C, Z′_(M2), may be measured, the capacitive contribution to Z′_(M2) being from parallel capacitive contributions Z_(C2) in parallel with Z₁₋₂ and Z₂₋₃.

Z′ _(M2) =Z _(C2) //Z ₁₋₂ //Z ₂₋₃.  Equation 7

In a third measurement, Pin 1, e.g. chip-carrier connection 108, and pin 2, e.g. chip-carrier connection 108 a, may be connected to plate 124, e.g. may be shorted to plate 124 at a point C. Capacitive impedance between pin 3, e.g. chip-carrier connection 108 b, and plate 124 at a point C, Z′_(M3), may be measured. The capacitive contribution to Z′_(M3) may be attributed to being from parallel capacitive contributions Z₃ in parallel with Z₂₋₃.

Z′ _(M3) =Z _(C3) //Z ₂₋₃.  Equation 8

In a fourth measurement, Pin 1, e.g. chip-carrier connection 108, may be connected to plate 124, e.g. may be shorted to plate 124 at a point C. Pin 2, e.g. chip-carrier connection 108 a, may be floated, e.g. pin 2 may be open circuited. Capacitive impedance between pin 3, e.g. chip-carrier connection 108 b, and plate 124 at a point C, Z′_(M4), may be measured. The capacitive contribution to Z′_(M4) may be attributed to being from parallel capacitive contributions Z₃ in parallel with the sum of Z₁₋₂ in parallel with Z_(C2), and Z₂₋₃.

Z′ _(m4) =Z _(C3)//[(Z ₁₋₂ //Z _(C2))+Z ₂₋₃].  Equation 9

In a fifth measurement, Pin 3, e.g. chip-carrier connection 108 b, may be connected to plate 124, e.g. may be shorted to plate 124 at a point C. Pin 2, e.g. chip-carrier connection 108 a, may be floated, e.g. pin 2 may be open circuited. Capacitive impedance between pin 1, e.g. chip-carrier connection 108, and plate 124 at a point C, Z′_(M5), may be measured. The capacitive contribution to Z′_(M5) may be attributed to being from parallel capacitive contributions Z_(C1) in parallel with the sum of Z₂₋₃ in parallel with Z_(C2), and Z₁₋₂.

Z′ _(M5) =Z _(C1)//[(Z ₂₋₃ //Z _(C2))+Z ₁₋₂].  Equation 10

Coupling capacitances Z₁₋₂ and Z₂₋₃ may be calculated based on equations 6 to 10 equations after 5 measurements are done. As Z_(C1) and Z₁₋₂ have a similar range of capacitance values, e.g. Z_(C1) and Z₁₋₂ may be of the same order of magnitude, the result of guarding by connecting to plate 124 may be more sensitive compared to guarding by grounding (ICT guarding). In other words the measured signal may be more sensitive to coupling capacitances Z₁₋₂ and Z₂₋₃. Therefore, anomalies in chip connection 106, in particular sweep defects, e.g. horizontal displacements in chip connections 106 which contribute to changes in coupling capacitances Z₁₋₂ and Z₂₋₃ may be detectable, as improvements in the detected signal may be obtained.

Detection circuit 126 of detection portion 122 may be configured to detect at least one of a group consisting of the following: capacitive impedance between the chip arrangement 114 and plate 124, capacitive impedance, C_(D), between chip 104 and plate 124, capacitive impedance, C_(W), between chip connection 106 and plate 124, capacitive impedance, C_(L), between chip-carrier connection 108 and plate 124, coupling capacitance between two adjacent chip-to-chip connections 118, 118 a, 118 b, coupling capacitance between two adjacent chip-carrier connections 108, 108 a, 108 b, and coupling capacitance between two adjacent chip connections 106, 106 a, 106 b.

According to an embodiment, plate 124 of measuring device 600 may be modified to include plate 224 of measuring device 200. At least one chip-carrier connection 108 may be in electrical connection with plate 224. All the features described with respect to plate 224 with respect to measuring device 200 are applicable to measuring device 600.

According to an embodiment, measuring device 600 may be modified to include top shield plate 346 included in measuring device 300 and described above. At least one chip-carrier connection 108 may be in electrical connection with plate 124. All the features described with respect to top shield plate 346 with respect to measuring device 300 are applicable to measuring device 600.

According to an embodiment, measuring device 600 may be modified to include bottom shield plate 448 included in measuring device 400 and described above. At least one chip-carrier connection 108 may be in electrical connection with plate 124. All the features described with respect to bottom shield plate 448 with respect to measuring device 400 are applicable to measuring device 600.

According to an embodiment, measuring device 600 may be modified to include top shield plate 346 and bottom shield plate 448 included in measuring device 500 and described above. At least one chip-carrier connection 108 may be in electrical connection with plate 124. All the features described with respect to top shield plate 346 and bottom shield plate 448 with respect to measuring device 400 are applicable to measuring device 600.

Through the enhancement of targeted contributions to Z_(C1) using measuring devices 100, 200, 300, 400 and 500 as those disclosed from FIGS. 1 to 5, a targeted signal, e.g. C_(W) contributing to signal Z_(C1) may be maximized, while other non-targeted contributions to signal Z_(C1), e.g. C_(L), e.g. C_(D), may be minimized.

FIG. 9A shows a close up X-ray for a device labeled #4. Illustration 900 shows a close up x-ray of chip-to-chip connections, e.g. pin 37 and 38. Illustration 910 shows a close up x-ray of chip-to-chip connections, e.g. pin 107 and 108. The anomalies of at least one of pin 37, 38, 107 and 108 of device #4 may include a carrier connection 108, e.g. a lead finger, that is horizontally bent, and showing wire sweep.

FIG. 9B shows a close up X-ray for a device labeled #5. Illustration 920 shows a close up x-ray of chip-to-chip connections, e.g. pin 26, e.g. pin 57 and 58. The anomalies of at least one of pins 57 and 68 of device #5 may include a carrier connection 108, e.g. a lead finger, which is vertically bent.

Illustration 930 of FIG. 9C shows the measured capacitance vs. pin number for device #4 and device #5 with known anomalies, and reference devices #ref 1 and #ref 2, measured using a measuring device 100 according to an embodiment.

The anomalies of horizontally bending and wire sweep demonstrate a small failure signature of device #4 in comparison with reference devices #ref 1 and #ref 2. The signal should be improved with mirror guarding. The anomalies of vertical bending of a lead frame of device #5 demonstrate a strong failure signature.

FIG. 10 shows a method 1000 for measuring a chip-to-chip-carrier connection, the method including:

configuring a power supply, e.g. an AC signal source to provide electric power, e.g. an electrical signal, e.g. an AC source signal, to a chip via at least one of a chip connection and a chip-carrier connection (in 1010);

receiving a chip arrangement by a chip arrangement receiving portion, the chip arrangement including a chip and a plurality of chip-to-chip-carrier connections (in 1020);

using a detection portion, including a plate and a detection circuit coupled to the plate, to detect an electrical signal from the plate while covering at least part of the chip arrangement with the plate (in 1030) and

electrically connecting at least one chip-carrier connection with the plate (in 1040).

Illustration 1100 of FIG. 11 shows a computer arrangement 1158 configured to execute instructions for measuring a chip-to-chip-carrier connection, including

executing instructions for configuring a power supply, e.g. an AC signal source to provide electric power, e.g. an electrical signal, e.g. an AC source signal to a chip via at least one of a chip connection and a chip-carrier connection;

executing instructions for receiving a chip arrangement by a chip arrangement receiving portion, the chip arrangement including a chip and one or more chip-to-chip-carrier connections

executing instructions for using a detection portion, including a plate and a detection circuit coupled to the plate, to detect an electrical signal from the plate while covering at least part of at least one of the chip, the chip-carrier, and the chip-to-chip-carrier connection with the plate; and

executing instructions for leaving at least part of the at least one of the chip, the chip-carrier, and the chip-to-chip-carrier connection uncovered by the plate.

Computer arrangement 1158 may be in electrical connection with detection circuit 126. Computer arrangement 1158 may include a processing circuit 1162, e.g. a central processing unit CPU for processing signal data from detection circuit 126. Processing circuit 1162 may be connected to a controller circuit 664. Processing circuit 1162 may include a controller circuit 1164. Processing circuit 1162 may be connected to at least one memory circuit, e.g. memory circuit 1166, e.g. RAM unit, e.g. memory circuit 1168, ROM unit. Processing circuit 1162 may be connected to at least one of controller circuit 1164, memory circuit 1166 and memory circuit 1164 by a bus circuit 1172, e.g. a system bus.

Controller circuit 1164 may be configured to process control instructions for measuring a chip-to-chip-carrier connection, including

processing control instructions for configuring a power supply, e.g. an AC signal source to provide electric power, e.g. an electrical signal, e.g. an AC source signal to a chip via at least one of a chip connection and a chip-carrier connection;

processing control instructions for receiving a chip arrangement by a chip arrangement receiving portion, the chip arrangement including a chip and one or more chip-to-chip-carrier connections

processing control instructions for using a detection portion, including a plate and a detection circuit coupled to the plate, to detect an electrical signal from the plate while covering at least part of at least one of the chip, the chip-carrier, and the chip-to-chip-carrier connection with the plate; and

processing control instructions for leaving at least part of the at least one of the chip, the chip-carrier, and the chip-to-chip-carrier connection uncovered by the plate.

Various embodiments provide a measuring device, including: a power supply configured to provide electric power to a chip via at least one of a chip connection and a chip-carrier connection; a chip arrangement receiving portion configured to receive a chip arrangement, the chip arrangement including a chip and a plurality of chip-to-chip-carrier connections; a detection portion including: a plate; a detection circuit coupled to the plate and configured to detect an electrical signal from the plate; wherein the plate is configured such that it covers at least part of the chip arrangement; and wherein at least one chip-carrier connection is in electrical connection with the plate.

According to an embodiment, the power supply includes an AC signal source configured to provide an AC electrical signal to a chip.

According to an embodiment, the plate is configured such that it covers at least part of the plurality of the chip-to-chip-carrier connections.

According to an embodiment, the chip includes a semiconductor chip.

According to an embodiment, each chip-to-chip-carrier connection includes a chip-carrier connection connected to the chip via a chip connection.

According to an embodiment, the chip-carrier connection includes at least part of one or more from the following group of chip-carrier connections, the group consisting of: a lead frame, an electrically conductive trace, a metal trace in substrate, an electrically conductive wire, a wire bond, a flip-chip bump, a through-silicon via TSV, a through-mold via TMV, a chip-package interconnect.

According to an embodiment, the chip connection includes an electrically conductive material.

According to an embodiment, the at least one chip-carrier connection is short-circuited to the plate.

According to an embodiment, the power supply is configured to provide an electrical signal to a chip via at least one of a first chip connection and a first chip-carrier connection and at least one further chip-carrier connection is connected to the plate.

According to an embodiment, the detection circuit is configured to detect at least one of a group consisting of the following: capacitive impedance between the chip arrangement and the plate, capacitive impedance between the chip and the plate, capacitive impedance between the chip connection and the plate, capacitive impedance between the carrier connection and the plate, coupling capacitance between two adjacent chip-to-chip connections, coupling capacitance between two adjacent chip-carrier connections, and coupling capacitance between two adjacent chip connections.

According to an embodiment, the plate is configured such that it covers at least part of the plurality of chip-to-chip-carrier connections and such that at least part of the chip and the chip-carrier is uncovered by the plate.

According to an embodiment, the plate is configured to include one or more from the following group of materials, the group consisting of: Au, Cu, Ag, Al, Ti, Fe, Ni, brass, steel, V2A steel, NiP, CuAu, CuAg, CuNi.

According to an embodiment, the plate includes one or more from the following group of plates, the group consisting of: a two-dimensional plate, a three-dimensional plate, a plate with a center portion removed, a rectangular ring plate, a circular ring plate.

According to an embodiment, the measuring device further includes a top shield plate formed between the chip arrangement and the plate.

According to an embodiment, the top shield plate is configured such that it shields at least part of the chip, the chip-carrier, and the chip-to-chip-carrier connection from the plate, and such that at least a portion of the chip, the chip-carrier and the chip-carrier connection is not shielded from the plate by the top shield plate.

According to an embodiment, the top shield plate is configured such that it shields at least part of the chip and the chip-carrier connection from the plate and such that the chip connection is not shielded from the plate by the top shield plate.

According to an embodiment, the top shield plate includes an electrically conductive material.

According to an embodiment, the measuring device further includes a bottom shield plate formed on the opposite side of the chip arrangement from the probe plate.

According to an embodiment, the bottom shield plate is configured such that it is formed on the opposite side of a chip connection from the probe plate.

According to an embodiment, the bottom shield plate includes an electrically conductive material.

According to an embodiment, the at least one chip-carrier connection is in electrical connection with the plate via an electrically conductive wire.

According to an embodiment, the measuring device further includes a multiplexer circuit for selecting electrical signals from the plate.

According to an embodiment, the measuring device further includes a processing circuit for processing one or more electrical signals detected by the detection circuit.

A method for measuring a chip-to-chip-carrier connection is provided according to an embodiment, the method including: configuring a power supply to provide an electrical signal to a chip via at least one of a chip connection and a chip-carrier connection; receiving a chip arrangement by a chip arrangement receiving portion, the chip arrangement including a chip and a plurality of chip-to-chip-carrier connections; using a detection portion, including a plate and a detection circuit coupled to the plate, to detect an electrical signal from the plate while covering at least part of the chip arrangement with the plate and electrically connecting at least one chip-carrier connection with the plate.

Various embodiments provide a measuring device for detecting anomalies in interconnections include near short wires, near short leads, vertically displaced wires, vertically sagging wires, sweep wires and horizontally displaced wires through enhancing coupling capacitance of horizontally displaced wires.

While the invention has been particularly shown and described with reference to specific embodiments, it should be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the spirit and scope of the invention as defined by the appended claims. The scope of the invention is thus indicated by the appended claims and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced. 

1. A measuring device, comprising: A power supply configured to provide electric power to a chip via at least one of a chip connection and a chip-carrier connection; a chip arrangement receiving portion configured to receive a chip arrangement, the chip arrangement comprising a chip and a plurality of chip-to-chip-carrier connections; a detection portion comprising: a plate; a detection circuit coupled to the plate and configured to detect an electrical signal from the plate; wherein the plate is configured such that it covers at least part of the chip arrangement; and wherein at least one chip-carrier connection is in electrical connection with the plate.
 2. The measuring device according to claim 1, wherein the power supply comprises an AC signal source configured to provide an AC electrical signal to a chip.
 3. The measuring device according to claim 1, wherein the plate is configured such that it covers at least part of the plurality of the chip-to-chip-carrier connections.
 4. The measuring device according to claim 1, wherein the chip comprises a semiconductor chip.
 5. The measuring device according to claim 1, wherein each chip-to-chip-carrier connection comprises a chip-carrier connection connected to the chip via a chip connection.
 6. The measuring device according to claim 1, wherein the chip-carrier connection comprises at least part of one or more from the following group of chip-carrier connections, the group consisting of: a lead frame, an electrically conductive trace, a metal trace in substrate, an electrically conductive wire, a wire bond, a flip-chip bump, a through-silicon via TSV, a through-mold via TMV, a chip-package interconnect.
 7. The measuring device according to claim 1, wherein the chip connection comprises an electrically conductive material.
 8. The measuring device according to claim 1, wherein the at least one chip-carrier connection is short-circuited to the plate.
 9. The measuring device according to claim 1, wherein the power supply is configured to provide electric power to a chip via at least one of a first chip connection and a first chip-carrier connection and wherein at least one further chip-carrier connection is connected to the plate.
 10. The measuring device according to claim 1, wherein the detection circuit is configured to detect at least one of a group consisting of the following: capacitive impedance between the chip arrangement and the plate, capacitive impedance between the chip and the plate, capacitive impedance between the chip connection and the plate, capacitive impedance between the carrier connection and the plate, coupling capacitance between two adjacent chip-to-chip connections, coupling capacitance between two adjacent chip-carrier connections, and coupling capacitance between two adjacent chip connections.
 11. The measuring device according to claim 1, wherein the plate is configured such that it covers at least part of the plurality of chip-to-chip-carrier connections and such that at least part of the chip and the chip-carrier is uncovered by the plate.
 12. The measuring device according to claim 1, wherein the plate is configured to comprise one or more from the following group of materials, the group consisting of: Au, Cu, Ag, Al, Ti, Fe, Ni, brass, steel, V2A steel, NiP, CuAu, CuAg, CuNi.
 13. The measuring device according to claim 1, wherein the plate comprises one or more from the following group of plates, the group consisting of: a two-dimensional plate, a three-dimensional plate, a plate with a center portion removed, a rectangular ring plate, a circular ring plate.
 14. The measuring device according to claim 1, further comprising a top shield plate formed between the chip arrangement and the plate.
 15. The measuring device according to claim 13, wherein the top shield plate is configured such that it shields at least part of the chip, the chip-carrier, and the chip-to-chip-carrier connection from the plate, and such that at least a portion of the chip, the chip-carrier and the chip-carrier connection is not shielded from the plate by the top shield plate.
 16. The measuring device according to claim 13, wherein the top shield plate is configured such that it shields at least part of the chip and the chip-carrier connection from the plate and such that the chip connection is not shielded from the plate by the top shield plate.
 17. The measuring device according to claim 13, wherein the top shield plate comprises an electrically conductive material.
 18. The measuring device according to claim 1, further comprising a bottom shield plate formed on the opposite side of the chip arrangement from the probe plate.
 19. The measuring device according to claim 17, wherein the bottom shield plate is configured such that it is formed on the opposite side of a chip connection from the probe plate.
 20. The measuring device according to claim 17, wherein the bottom shield plate comprises an electrically conductive material.
 21. The measuring device according to claim 1, wherein the at least one chip-carrier connection is in electrical connection with the plate via an electrically conductive wire.
 22. The measuring device according to claim 1, further comprising a multiplexer circuit for selecting electrical signals from the plate.
 23. The measuring device according to claim 1, further comprising a processing circuit for processing one or more electrical signals detected by the detection circuit.
 24. A method for measuring a chip-to-chip-carrier connection, the method comprising: configuring a power supply to provide electric power to a chip via at least one of a chip connection and a chip-carrier connection; receiving a chip arrangement by a chip arrangement receiving portion, the chip arrangement including a chip and a plurality of chip-to-chip-carrier connections; using a detection portion, including a plate and a detection circuit coupled to the plate, to detect an electrical signal from the plate while covering at least part of the chip arrangement with the plate and electrically connecting at least one chip-carrier connection with the plate. 